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This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary use includes Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
End Products:
- Automotive
- Ideal for Coil-on-Plug Applications
- New Design Increase Unclamped Inductive Switching (UIS) Energy per Area
- Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
- Integrated Gate-Emitter ESD Protection
- Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices
- Low Saturation Voltage
- High Pulsed Current Capability
- Optional Gate Resistor and Gate-Emitter Resistor
LGB18N40ATH Parts
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LGB18N40ATH Applications
- Ignition Systems
