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NGD15N41ACLT4G
IGNITION IGBT 15 A, 410 V | Series: LGB15N41ATI
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
End Products:
- Automotive
| Property | Value |
|---|---|
TYP BVCES@IC (V) | 410 |
ICmax (A) | 15 |
VCE(sat) (V) | 1.9 |
EAS (mJ) | 250 |
PDMAX (W) | 107 |
- DPAK Package Offers Smaller Footprint and Increased Board Space
- Gate-Emitter ESD Protection
- Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
- Integrated ESD Diode Protection
- New Cell Design Increases Unclamped Inductive Switching (UIS) Energy Per Area
- Short-Circuit Withstand Capability
- Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices
- Low Saturation Voltage
- High Pulsed Current Capability
- Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE)
NGD15N41ACLT4G Applications
- Ignition Systems
- Coil-on-Plug
NGD15N41ACLT4G Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| NGD15N41ACLT4G | IGNITION IGBT 15 A, 410 V |  9/12/2017 |  9/12/2017 | Yes9/12/2017 | View More |
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