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Series: Low-Side Driver with Charge Pump

Ultrafast low-side SiC-MOSFET and IGBT driver with negative voltage charge pump
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The IX4351NE is designed specifically to drive SiC-MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.

Desaturation detection circuitry detects an over current condition of the SiC-MOSFET and initiates a soft turn off, thus preventing a potentially damaging dV/dt event. The logic input is TTL and CMOS compatible; this input does not need to be level shifted even with a negative gate drive bias voltage. Protection features include UVLO and thermal shutdown detection. An open drain FAULT output signals a fault condition to the microcontroller.

The IX4351NE is rated for operational temperature range of -40°C to +125°C and is available in a thermally enhanced 16-pin narrow SOIC package.


  • Matched rise and fall times
  • Low propagation delay
  • Wide operating voltage range
  • Matched rise and fall times
  • Low propagation delay
  • Wide operating voltage range

Low-Side Driver with Charge Pump Parts

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Series: Low-Side Driver with Charge Pump Resources