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IXD2012N

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IXD2012N

Half-Bridge DRVR 200V 1.4A SOIC(N)-8 | Series: High-Side and Low-Side Drivers
info
The IXD2012NTR is a 200 V, high-speed gate driver with high-side and low-side outputs, designed to drive N-channel MOSFETs and IGBTs in a half-bridge configuration. The IXD2012NTR logic inputs are compatible with standard TTL and CMOS levels down to 3.3 V, to interface easily with controlling devices. The driver outputs feature high pulse current buffers that are designed for minimum driver cross conduction.
PropertyValue
Maximum Offset Voltage
200V
Typical Source Peak Drive Current
1.9A
Typical Sink Peak Drive Current
2.3A
Inputs
HIN / LIN
Deadtime
None
Propagation Delay tON
180ns
Propagation Delay tOFF
220ns
Rise Time tr
30ns
Fall Time tf
20ns
IC Package Type
8-pin SOIC
  • 200 VDC floating high-side voltage capability
  • 1.9 A source / 2.3 A sink gate drive capability
  • +10 V to +20 V VCC supply voltage range
  • TTL / CMOS compatible logic inputs
  • −40 ºC to +125 ºC operating temperature range
  • Industry standard pinout
  • Can drive a broad range of MOSFETs and IGBTs
  • Operates from standard supply voltage levels
  • Can directly be controlled from most microcontrollers
  • Minimum cross conduction minimizes circuit losses

IXD2012N Applications

Highlights Section

  • DC-DC Converters
  • AC-DC Inverters
  • Motor Controllers
  • Class-D Power Amplifiers

IXD2012N Resources

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHC's) DeclarationREACH (SVHC's)Halogen FreeIPC-Material Declaration
IXD2012NTRHalf-Bridge DRVR 200V 1.4A SOIC(N)-8

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