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IX4351NE
SiC MOSFET DRIVER 9A 16L SOIC EXP PAD | Series: Low-Side Driver with Charge Pump
The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.
Desaturation detection circuitry detects an over current condition of the SiC MOSFET and initiates a soft turn off, thus preventing a potentially damaging dV/dt event. The logic input is TTL and CMOS compatible; this input does not need to be level shifted even with a negative gate drive bias voltage. Protection features include UVLO and thermal shutdown detection. An open drain FAULT output signals a fault condition to the microcontroller.
The IX4351NE is rated for operational temperature range of -40°C to +125°C, and is available in a thermally enhanced 16-pin power SOIC package.
| Property | Value |
|---|---|
Peak Drive Current | 9 |
Output Resistance Source / Sink (Ω) | 2 / 1.5 |
Logic Configurations | non-inverting |
Enable Function | No |
Under Voltage Lockout Maximum Threshold (V) | 10 |
IC Package Type | 16-pin power SOIC with exposed thermal pad |
- Separate 9 A peak source and sink outputs
- Operating Voltage Range: –10 V to +25 V
- Internal negative charge pump regulator for selectable negative gate drive bias
- Desaturation detection with soft shutdown sink driver
- TTL and CMOS compatible input
- Under Voltage lockout (UVLO)
- Thermal shutdown
- Open drain FAULT output
IX4351NE Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IX4351NE | SiC MOSFET DRIVER 9A 16L SOIC EXP PAD | View More | |||||||
| IX4351NETR | SiC MOSFET DRIVER 9A 16L SOIC EXP PAD TR | View More |
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