IX4351NE - Low-Side Driver with Charge Pump Series

Series: Low-Side Driver with Charge Pump
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The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.

Desaturation detection circuitry detects an over current condition of the SiC MOSFET and initiates a soft turn off, thus preventing a potentially damaging dV/dt event. The logic input is TTL and CMOS compatible; this input does not need to be level shifted even with a negative gate drive bias voltage. Protection features include UVLO and thermal shutdown detection. An open drain FAULT output signals a fault condition to the microcontroller.

The IX4351NE is rated for operational temperature range of -40°C to +125°C, and is available in a thermally enhanced 16-pin power SOIC package.

Features:

  • Separate 9A peak source and sink outputs
  • Operating Voltage Range: -10V to +25V
  • Internal negative charge pump regulator for selectable negative gate drive bias
  • Desaturation detection with soft shutdown sink driver
  • TTL and CMOS compatible input
  • Under Voltage lockout (UVLO)
  • Thermal shutdown
  • Open drain FAULT output
Check Stock
Property (Mouseover for details) Value
Peak Drive Current 9
Output Resistance Source / Sink (Ω) 2 / 1.5
Logic Configurations non-inverting
Enable Function No
Under Voltage Lockout Maximum Threshold (V) 10
Package Type 16-pin power SOIC with exposed thermal pad
Sample Request No
Check Stock Yes
Partner ECAD Models IX4351NE

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