Link has been copied to clipboard
LSIC1MO120E0080
1200V/80mohm SiC MOSFET TO-247-3L | Series: SIC MOSFETs
Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0080 1200 V come in ratings of 1200 V, 80 mOhm in a TO-247-3L package.
| Property | Value |
|---|---|
Status | Active |
VDSS (V) | 1200 |
RDS(ON),max @ 25°C (mΩ) | 80 |
ID(cont) @25°C | 39 |
RthJC (K/W) | 0.7 |
TJ Max (°C) | 175 |
Configuration | N-Channel |
Qualification | Industrial |
- Optimized for high frequency, high-efficiency applications
- Extremely low gate charge and output capacitance
- Low gate resistance for high-frequency switching
- Normally-off operation at all temperatures
- Ultra-low on-resistance
LSIC1MO120E0080 Applications
- Solar Inverters
- Switch Mode Power Supplies
- UPS systems, Motor Drives
- High Voltage Dc–dc converters
- Battery Chargers and Induction Heating
LSIC1MO120E0080 Resources
Link has been copied to clipboardShowing 1 to 1 of 1 Total Results
Share
| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| LSIC1MO120E0080 | 1200V/80mohm SiC MOSFET TO-247-3L |  7/17/2020 | No |  CoC_RoHS9_LSIC1MO120E0080 | REACH209_Declaration_Contain-_LSIC1MO120E0080 | Contains | Yes7/17/2020 | View More |
If the product environmental information that you are looking for does not appear in this tab, please complete the Product Environmental Information Request Form.
Showcasing 1.2 kV, 80 m? SiC MOSFETs
Learn about our innovative high-voltage, low-resistance silicon carbide metal-oxide–semiconductor field effect transistor diodes for power conversion and current switching.